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INTRINSIC EPI


SEH is a world leader in epitaxial silicon technology. Our tool set, recipe development and process control systems are capable of delivering a very high quality epi wafer for your applications. Epi wafers for CMOS applications are available in diameters up to 300mm and for Discrete/Power applications up to 200mm diameter. Intrinsic or un-doped EPI wafers are available. Our process is capable of achieving carrier concentrations <1E13/cm3 in layers > 5 microns. Very lightly doped EPI layers with targeted resistivity in the 100 to 500 ?-cm range are also available.