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SOI wafers are commonly used semiconductor materials for leading edge devices such as low power and high speed LSI's, smart sensors, MEMS, and smart power devices. SEH has been providing several kinds of SOI wafers to meet various customers' requirements.

SEH started development of SOI wafers in 1988. We began with bonded SOI wafers by precisely controlled grinding and polishing technology, responding to customers' high quality requirements. We introduced Unibond® technology for thin SOI wafer production at low cost in 1997.

To meet customer demands for SOI layers in the 1.0 to 5.0 µm thickness range with excellent uniformity within wafer and wafer-to-wafer, SEH has optimized EPI growth on Unibond® SOI wafers. EPI on SOI can also be used to produce SOI stacks of dissimilar dopants and resistivity.

SOI Products from SEH
Thick SOI Wafer (Bonded and Polished SOI with layer thickness > 1µm)
Thin SOI Wafers (Unibond® SOI with layer thickness < 1µm)